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 TBA 229-5
Dual Sound FM IF Amplifier
TBA 229-5
Bipolar IC
Features High AM suppression over a very wide input voltage range High sensitivity Very high symmetry
P-DIP-16
The component contains two separate limiter amplifiers with FM demodulators and separate AF outputs.
Type TBA 229-5
Ordering Code Q67000-A5133
Package P-DIP-16
Circuit Description The component contains two separate FM sound IF sections for television stereo applications or for multistandard receivers. Each FM section consists of an eight-stage symmetrical limiter amplifier followed by a coincidence demodulator and an AF pre-amplifier with a low-ohmic output. The component features considerably improved AM suppression characteristics with small input signals, as well as a very low frequency deviation between THD min and AM min.
Semiconductor Group
1
01.93
TBA 229-5
Absolute Maximum Ratings Parameter Supply voltage Reference current IF input voltage DC voltages DC currents Junction temperature Storage temperature range Thermal resistance (system-air) Operating Range Supply voltage Ambient temperature Frequency VS TA fI 10.5 0 0.1 15.75 70 12 V C MHz Symbol min. VS I REF VI IF rms V 9, 10, 11 V 14, 15, 16 I 1, 2, 4, 5, 7, 8 Tj T stg R th SA 0 0 0 0 0 0 - 40 Limit Values max. 16 2 600 V REF V REF 2 150 125 80 V mA mV V V mA C C K/W Unit
Semiconductor Group
2
TBA 229-5
Characteristics V S = 12 V; T A = 25 C; VI IF 14 rms = 10 mV; fI IF 11, 14 = 5.5 MHz; f mod = 1 kHz; f = 30 kHz (if not stated otherwise) Parameter Symbol Limit Values min. typ. max. Current consumption I S Input voltage for limiter threshold Output voltage DC voltage portion Total harmonic distortion VI 11 rms VI 14 rms VQ 4 rms VQ 5 rms VQ 4 = VQ 5 = THD
4,THD 5
Unit Test Condition
25
35 50 50
42 100 100 700 700 6.2 6.2 0.8
mA
V V
VQ 4, 5 = - 3 dB
510 510 4.8 4.8
600 600 6 6 0.4
mV mV V V % dB dB dB
f
= 0; THD = THD min
THD = THD min
AM 4 AM suppression V i rms =1 mV; m = 30% AM 5 Cross-talk rejection
55 55
60 60
VI rms=1 mV; m = 30% fI IF 11 = 5.5 MHz; f 11 = 0 kHz; VI 11 rms = 4 mV; VI 14 rms =10 mV fI IF 11 = 5.74 MHz; f 14 = 0 kHz VI 11 rms = 4 mV; VI 14 rms =10 mV
C IF 1-2 = VQ 4/ 60 VQ 5 C IF 1-2 = VQ 4/ 60 VQ 5 Reference voltage V 13 = 5.4 8 0 6 6.6
dB V V V
Switching voltage muting ON (AF off) V 16 V 16 OFF Design-Related Values Input resistance Output resistance Input impedance IF residual voltage Hum suppression R I 1, 2 R I 7, 8 R Q 4, 5
VS 3
20 20 100 800 15 32
k k

Z I11, 14
VQ 4, 5 (IF) Q hum
mV dB fS = 100 Hz VS rms = 500 mV; VS/VQ 4; VS/ VQ5
Frequency deviation AM min - THD min
f IF
10
kHz
Semiconductor Group
3
TBA 229-5
Block Diagram
Semiconductor Group
4
TBA 229-5
Pin Functions Pin No. 1, 2 Function Demodulator tank circuit connection IF 1 (high impedance input - slope of S-curve can be determined by external resistor between pins 1 and 2) GND AF output IF 1 (emitter follower) AF output IF 2 (emitter follower) Supply voltage Demodulator tank circuit connection IF 2 (high impedance input - slope of S-curve can be determined by external resistor between pins 1 and 2) Operating point feedback of limiter amplifier and low end IF 2 (RF decoupling of IF amplifiers with appropriate capacitors is required! Operating point feedback of limiter amplifier IF 2 (RF decoupling of IF amplifiers with appropriate capacitors is required!) IF 2 input (input of limiter amplifier IF 2; internal resistor between pins 9 and 11 is typ. 800 ) GND Internal reference voltage (typ. 6 V) IF 1 input (input of limiter amplifier IF 2; internal resistor between pins 14 and 15 is typ. 800 ) Operating feedback of limiter amplifier IF 1 (RF decoupling of IF amplifiers with appropriate capacitors is required!) Operating point feedback of limiter amplifier and low end IF 1 (RF decoupling of IF amplifiers with appropriate capacitors is required!)
3 4 5 6 7, 8
9 10 11 12 13 14
15 16
Semiconductor Group
5
TBA 229-5
Diagrams AF Output Voltage, Total Harmonic Distortion, Circuit Voltage versus Circuit Q B
V Q: THD: Measured at: V cct: Measured at: Q B: Measured at: Circuit:
VQ 4 rms; VQ 5 rms THD 4; THD 5 fI IF = 5.5 MHz; f = 30 kHz; f mod = 1 kHz; VI IF = 10 mV V 1, 2 = V 7, 8 fI IF = 5.5 MHz; f = 0 kHz; VI
IF
= 10 mV
IF
Q between connections 1, 2 and 7, 8 f I IF = 5.5 MHz/f I IF for 3 dB bandwidth, f = 0 kHz; VI
= 10 mV
L = 10 turns 0.25 CuL; Vogt Coil Assembly 517 12 000 00 without cap C = 1 nF STYROFLEX Capacitor
Semiconductor Group
6
TBA 229-5
Tank Voltage versus f IF
Semiconductor Group
7
TBA 229-5
Tank Voltage versus f IF
Semiconductor Group
8
TBA 229-5
Total Harmonic Distortion versus Detuning (FM Operation) THD 4 = f (f I IF); VI= 10 mV; V S = 12 V; f mod = 1 kHz, f = 50 kHz, 30 kHz, 12.5 kHz
Semiconductor Group
9
TBA 229-5
Total Harmonic Distortion versus Detuning (FM Operation) compensated for minimum total harmonic distortion at f IF = 5.5 MHz; THD = f (fI IF); VI = 10 mV; V S = 12 V; f mod = 1 kHz, f = 50 kHz; 30 kHz; 12.5 kHz
Semiconductor Group
10
TBA 229-5
Test Circuit
Semiconductor Group
11
TBA 229-5
Application Circuit L = 10 turns 0.2 CuL; Q B approx. 25 e.g. Vogt Coil Assembly 517 12 000 00
Semiconductor Group
12


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